FGY75T120SWD datasheet, igbt equivalent, ON Semiconductor

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Features and benefits

* Maximum Junction Temperature − TJ = 175°C
* Positive Temperature Coefficient for Easy Parallel Operation
* High Current Capability
* Smooth and Optimize.

Application

like Solar, UPS and ESS. Features
* Maximum Junction Temperature − TJ = 175°C
* Positive Temperature Coefficient.

Description

Using the novel field stop 7th generation IGBT technology and the Gen7 Diode in TP247 3−lead package, FGY75T120SWD offers the optimum performance with low switching and conduction losses for high−efficiency operations in various applications like Sol.

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